AOB4S60

AOT4S60/AOB4S60/AOTF4S60 600V 4A α MOS TM Power Transistor General Description Product Summary The AOT4S60 & AOB4S60 & AOTF4S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. For Halogen Free add "L" suffix to part number: AOT4S60L & AOB4S60L & AOTF4S60L VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested TO-220 TO-220F Top View TO-263 D D2PAK 700V 16A 0.9Ω 6nC 1.5µJ D DS G G DS G S G AOT4S60 AOTF4S60 AOB4S60 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT4S60/AOB4S60 Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G ID IDM IAR EAR EAS 4 3.7 16 1.6 38 77 TC=25°C Power Dissipation B Derate above 25oC MOSFET dv/dt ruggedness Peak diode recovery dv/dt H PD dv/dt 83 0.67 100 20 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J Thermal Characteristics TL 300 Parameter Symbol AOT4S60/AOB4S60 Maximum Junction-to-Ambient A,D Maximum Case-to-sink A RθJA RθCS 65 0.5...