AOC3860A

AOC3860A 12V Common-Drain Dual N-Channel MOSFET General Description Trench Power MOSFET technology Low RSS(ON) With ESD protection to improve battery performance and safety Common drain configuration for design simplicity RoHS and Halogen-Free Compliant Applications Battery protection switch Mobile device battery charging and discharging Product Summary VSS RSS(ON) (at VGS=4.5V) RSS(ON) (at VGS=4.0V) RSS(ON) (at VGS=3.8V) RSS(ON) (at VGS=3.1V) RSS(ON) (at VGS=2.5V) Typical ESD protection 12V < 3.5mΩ < 3.7mΩ < 3.75mΩ < 4.3mΩ < 5mΩ HBM Class 2 AlphaDFN™ 3.05x1.77A_6 Top View Bottom View Pin1 Pin1 Orderable Part Number AOC3860A Top View Pin1 Bottom View 13 S1 G1 S1 S2 G2 S2 64 G1 G2 S1 S2 Package Type AlphaDFN 3.05x1.77A_6 Form Tape & Reel Minimum Order Quantity 8000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Source-Source Voltage VSS Gate-Source Voltage Source Current(DC) Note1 Source Current(Pulse) Note2 Power Dissipation Note1 TA=25°C TA=25°C VGS IS ISM PD Junction and Storage Temperature Range TJ, TSTG Rating 12 ±8 25 100 2.5 -55 to 150 Units V V A W °C Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient Maximum Junction-to-Ambient t ≤ 10s Steady-State RθJA Note 1. Is rated value is based on bare silicon.Mounted on 70mmx70mm FR-4 board. Note 2. PW <10 µs pulses, duty cycle 1% max. Typical 40 50 Units °C/W °C/W Rev.1.0 February 2018 www.aosmd.com Page 1 of 5 AOC3860A Electri...