AOCA32108E
12V Common-Drain Dual N-Channel MOSFET
General Description
• Trench Power MOSFET technology • Ultra low RSS(...
AOCA32108E
12V Common-Drain Dual N-Channel
MOSFET
General Description
Trench Power
MOSFET technology Ultra low RSS(ON) With ESD protection to improve battery performance and safety Common drain configuration for design simplicity RoHS and Halogen-Free Compliant
Applications
Battery protection switch Mobile device battery charging and discharging
Product Summary
VSS
RSS(ON) (at VGS=4.5V) RSS(ON) (at VGS=3.8V) RSS(ON) (at VGS=3.1V) RSS(ON) (at VGS=2.5V)
Typical ESD protection
12V
< 3.8mΩ < 4mΩ < 4.6mΩ < 5.6mΩ
HBM Class 2
AlphaDFN 3.01x1.52B_10
Top View
Bottom View
Pin1
Orderable Part Number
AOCA32108E
Top View
4 6
3
10 9
2 5
8
G1
17
Pin1 1, 2, 7, 8: Source(FET1) 5: Gate(FET1)
Package Type
AlphaDFN 3.01x1.52B_10
3, 4, 9, 10: Source(FET2) 6: Gate(FET2)
Form
Tape & Reel
D1 D2
G2 S1 S2
Minimum Order Quantity
8000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Source-Source
Voltage
VSS
Gate-Source
Voltage Source Current(DC) Note1 Source Current(Pulse) Note2 Power Dissipation Note1
TA=25°C TA=25°C
VGS IS ISM PD
Junction and Storage Temperature Range
TJ, TSTG
Rating 12 ±8 25 140 3.1
-55 to 150
Units V V
A
W °C
Thermal Characteristics
Parameter
Symbol
Maximum Junction-to-Ambient Maximum Junction-to-Ambient
t ≤ 10s Steady-State
RqJA
Note 1. Is rated value is based on bare silicon.Mounted on 70mmx70mm FR-4 board. Note 2. PW <10 μs pulses, duty cycle 1% max.
Typical 30 40
Units °C/W °C/W
Rev.1.1: March 2020
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