AOD21357/AOI21357
30V P-Channel MOSFET
General Description
• Latest advanced trench technology • Low RDS(ON) • High Cur...
AOD21357/AOI21357
30V P-Channel
MOSFET
General Description
Latest advanced trench technology Low RDS(ON) High Current Capability RoHS and Halogen-Free Compliant
Product Summary
VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V)
-30V -70A < 8mΩ < 13mΩ
Applications
Notebook AC-in load switch Battery protection charge/discharge
100% UIS Tested 100% Rg Tested
TopView
TO252 DPAK
Bottom View
Top View
TO-251A IPAK Bottom View
D
D D
DS G
DG S
G
Orderable Part Number
Package Type
AOD21357 AOI21357
TO-252 TO-251A
DS
S
Form
Tape & Reel Tube
G
G D
S
Minimum Order Quantity
2500 3500
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Continuous Drain Current Avalanche Current C
TA=25°C TA=70°C
Avalanche energy L=0.1mH
TC=25°C Power Dissipation B TC=100°C
C
VGS ID
IDM IDSM
IAS EAS PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum -30 ±25 -70 -50 -180 -23 -18 39 76 78 31 6.2 4
-55 to 150
Units V V
A
A A mJ W
W °C
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RqJA RqJC
Typ 15 40 1.3
Max 20 50 1.6
Units °C/W °C/W °C/W
Rev.1.0: November 2018
www.aosmd.com
Page 1 of 6
AOD21357/AOI21357
Electrical Characteristics (TJ=2...