AOD609G Complementary Enhancement Mode Field Effect Transistor
General Description
The AOD609G uses advanced trench tec...
AOD609G Complementary Enhancement Mode Field Effect Transistor
General Description
The AOD609G uses advanced trench technology
MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary
MOSFETs may be used in H-bridge, Inverters and other applications.
-RoHS Compliant -Halogen Free*
Features
n-channel
VDS (V) = 40V, ID = 12A (VGS=10V) RDS(ON)< 30mW (VGS=10V) RDS(ON)< 40mW (VGS=4.5V) p-channel
VDS (V) = -40V, ID = -12A (VGS=-10V) RDS(ON)< 45mW (VGS= -10V) RDS(ON)< 66mW (VGS= -4.5V)
100% UIS Tested!
100% Rg Tested!
Top View
TO-252-4L D-PAK
D1/D2
Bottom View
Top View Drain Connected to Tab
D1/D2
G2 S2 G1 S1
G1 S1
n-channel
G2 S2
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source
Voltage
VDS 40
Gate-Source
Voltage
VGS ±20
Continuous Drain TC=25°C
Current B,H
TC=100°C
Pulsed Drain Current B
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
ID IDM IAR EAR
12 12 30 14 9.8
Power Dissipation
TC=25°C TC=100°C
PD
27 14
Power Dissipation
TA=25°C TA=70°C
PDSM
2 1.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
Max p-channel -40 ±20 -12 -12 -30 -20 20 30 15 2 1.3
-55 to 175
Thermal Characteristics: n-channel and p-channel
Parameter Maximum Junction-to-Ambient A,D
Maximum Junction-to-Ambient A,D
t ≤ 10s Steady-State
Maximum Junction-to-Lead C Maximum Junction-to-Ambient A,D Maximum Junction-to-Ambient A,D
Steady-State t ≤ 10s
Steady-State
Maximum Junct...