AOD1N60/AOU1N60/AOI1N60
600V,1.3A N-Channel MOSFET
General Description
Product Summary
The AOD1N60 & AOU1N60 & AOI1N6...
AOD1N60/AOU1N60/AOI1N60
600V,1.3A N-Channel
MOSFET
General Description
Product Summary
The AOD1N60 & AOU1N60 & AOI1N60 have been fabricated using an advanced high
voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V)
100% UIS Tested! 100% Rg Tested!
700V@150℃ 1.3A < 9Ω
TO252 DPAK
Top View
Bottom View
D D
Top View
TO251A IPAK
Bottom View
TO251
Top View
Bottom View
D
S G AOD1N60
G S
S D G
AOI1N60
G
D S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Continuous Drain TC=25°C
CurrentB
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy H
Peak diode recovery dv/dt
ID
IDM IAR EAR EAS dv/dt
TC=25°C Power Dissipation B Derate above 25oC
PD
Junction and Storage Temperature Range
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds
TJ, TSTG TL
DS G AOU1N60
Maximum 600 ±30 1.3 0.8 4 1 15 30 5 45 0.36
-50 to 150
300
G S DG
S
Units V V
A
A mJ mJ V/ns W W/ oC °C
°C
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F
Symbol RθJA RθCS RθJC
Typical 45
...