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AOI442 Datasheet

Part Number AOI442
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description 60V N-Channel MOSFET
Datasheet AOI442 DatasheetAOI442 Datasheet (PDF)

AOD442/AOI442 60V N-Channel MOSFET General Description Product Summary The AOD442/AOI442 used advanced trench technology to provide excellent RDS(ON) and low gate charge. Those devices are suitable for use as a load switch or in PWM applications. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested 60V 37A < 20mΩ < 25mΩ Top View D TO252 DPAK Bottom View D Top View TO-251A IPAK Bottom View D D S G G S S D G Absolute Maximum Ratings TA=.

  AOI442   AOI442






Part Number AOI442
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet AOI442 DatasheetAOI442 Datasheet (PDF)

isc N-Channel MOSFET Transistor AOI442 ·FEATURES ·Drain Current –ID= 37A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 20mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Be suitable for synchronous rectification for server and general purpose applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-.

  AOI442   AOI442







60V N-Channel MOSFET

AOD442/AOI442 60V N-Channel MOSFET General Description Product Summary The AOD442/AOI442 used advanced trench technology to provide excellent RDS(ON) and low gate charge. Those devices are suitable for use as a load switch or in PWM applications. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested 60V 37A < 20mΩ < 25mΩ Top View D TO252 DPAK Bottom View D Top View TO-251A IPAK Bottom View D D S G G S S D G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 37 26 60 7 5 30 45 60 30 2.1 1.3 -55 to 175 G D S G Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 17.4 51 1.8 Max 25 60 2.5 S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 0 : Aug 2009 www.aosmd.com Page 1 of 6 AOD442/AOI442 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, .


2015-09-17 : CED84A4    CEU84A4    CED6056    CEU6056    CED6086    CEU6086    CED6186    CEU6186    CED6336    CEU6336   


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