MOSFET. AOI472 Datasheet

AOI472 Datasheet PDF


Part AOI472
Description N-Channel MOSFET
Feature AOI472 N-Channel Enhancement Mode Field Effect Transistor General Description The AOI472 uses advan.
Manufacture Alpha & Omega Semiconductors
Datasheet
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AOI472 N-Channel Enhancement Mode Field Effect Transistor G AOI472 Datasheet
AOD472A/AOI472A 30V N-Channel AlphaMOS General Description AOI472A Datasheet




AOI472
AOI472
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOI472 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
product AOI472 is Pb-free (meets ROHS & Sony 259
specifications).
Features
1.4
VDS (V) = 25V
ID = 50A (VGS = 10V)
RDS(ON) <6.4 m(VGS = 10V)
RDS(ON) <9.7 m(VGS = 4.5V)
UIS Teste1d93
Rg,Ciss,Co1s8s,Crss Tested
IPAK
D
GD S
Top View
Drain Connected
to Tab
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
ID
IDM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
25
±20
50
50
150
50
125
50
25
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
15
41
2.1
Max
20
50
3
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com



AOI472
AOI472
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250uA, VGS=0V
25
V
IDSS Zero Gate Voltage Drain Current
VDS=20V, VGS=0V
TJ=55°C
1
µA
5
IGSS Gate-Body leakage current
VDS=0V, VGS=±20V
100 nA
VGS(th) Gate Threshold Voltage
VDS=VGS, ID=250µA
1 1.4 2.5 V
ID(ON)
On state drain current
VGS=10V, VDS=5V
150
A
VGS=10V, ID=30A
5.2 6.4
RDS(ON) Static Drain-Source On-Resistance
TJ=125°C
7.8
m
VGS=4.5V, ID=20A
8 9.7
gFS Forward Transconductance
VDS=5V, ID=20A
49 S
VSD Diode Forward Voltage
IS=1A, VGS=0V
0.74 1
V
IS Maximum Body-Diode Continuous Current
50 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=12.5V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
2050
485
280
0.86
2460
600
400
1.5
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VGS=10V, VDS=12.5V, ID=20A
VGS=10V, VDS=12.5V, RL=0.68,
RGEN=3
IF=20A, dI/dt=100A/µs
IF=20A, dI/dt=100A/µs
34 41 nC
17 22 nC
5 6.5 nC
3.5 4.6 nC
7.5 10 ns
11 22 ns
27 35 ns
8 16 ns
30 36 ns
19 23 nC
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating. Rev0: Aprial 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com






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