DatasheetsPDF.com

AOI516 Datasheet

Part Number AOI516
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description 30V N-Channel MOSFET
Datasheet AOI516 DatasheetAOI516 Datasheet (PDF)

AOD516/AOI516/AOY516 30V N-Channel AlphaMOS General Description • Latest Trench Power MOSFET technology • Very Low RDS(on) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) Application • DC/DC Converters in Computing • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested 30V 46A < 5mΩ < 10mΩ TO252 DPAK: AOD516 TopView Bottom View TO-251B .

  AOI516   AOI516






Part Number AOI516
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet AOI516 DatasheetAOI516 Datasheet (PDF)

isc N-Channel MOSFET Transistor AOI516 FEATURES ·Drain Current –ID= 50A@ TC=25℃ ·Drain Source Voltage- : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.0mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 30 V VGS Gate-Source V.

  AOI516   AOI516







30V N-Channel MOSFET

AOD516/AOI516/AOY516 30V N-Channel AlphaMOS General Description • Latest Trench Power MOSFET technology • Very Low RDS(on) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) Application • DC/DC Converters in Computing • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested 30V 46A < 5mΩ < 10mΩ TO252 DPAK: AOD516 TopView Bottom View TO-251B IPAK: AOI516/AOY516 Top View Bottom View D DD DS G DG S S D G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS EAS VDS Spike 100ns VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 46 36 170 18 14 29 42 36 50 25 2.5 1.6 -55 to 175 G D S Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 16 41 2.5 Max 20 50 3 G S Units V V A A A mJ V W W °C Units °C/W °C/W °C/W Rev.5.0: July 2013 www.aosmd.com Page 1 of 6 AOD516/AOI516/AOY516 Electrical Characteristics (TJ=25°C unless otherwise.


2014-01-11 : TSL2591    ACNH3212    ACNH3112    ACNM3112    ACNM1112    ACNM7112    ACNM5112    ACNV260E    ACNW3190    ADUM6000   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)