AOI950A70

AOD950A70/AOI950A70 700V, a MOS5 TM N-Channel Power Transistor General Description Proprietary aMOS5TM technology Low RDS(ON) Optimized switching parameters for better EMI performance Enhanced body diode for robustness and fast reverse recovery Applications Flyback for SMPS Charger,Adapter,lighting Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested 800V 20A < 0.95Ω 9.4nC 1.2mJ TO252 DPAK Top View D Bottom View D D S D S G AOD950A70 GD S G S Orderable Part Number AOD950A70 AOI950A70 TO-251A IPAK Top View D Bottom View D GDS AOI950A70 Package Type TO-252 TO-251A S DG Form Tape & Reel Tube D G S Minimum Order Quantity 2500 3500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Gate-Source Voltage (dynamic) AC( f>1Hz) Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C L=1mH Repetitive avalanche energy C Single pulsed avalanche energy H MOSFET dv/dt ruggedness Peak diode recovery dv/dt VGS VGS ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25°C PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL Maximum 700 ±20 ±30 5 3.2 20 0.8 0.3 7.5 100 20 56.5 0.45 -55 to 150 300 Units V V V A A mJ mJ V/ns W W/°C °C °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-...