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AOK20N60L Datasheet

Part Number AOK20N60L
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description N-Channel MOSFET
Datasheet AOK20N60L DatasheetAOK20N60L Datasheet (PDF)

AOK20N60L 600V,20A N-Channel MOSFET General Description Product Summary The AOK20N60L is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested Top View.

  AOK20N60L   AOK20N60L






Part Number AOK20N60L
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet AOK20N60L DatasheetAOK20N60L Datasheet (PDF)

isc N-Channel MOSFET Transistor AOK20N60L FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.37Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Sour.

  AOK20N60L   AOK20N60L







N-Channel MOSFET

AOK20N60L 600V,20A N-Channel MOSFET General Description Product Summary The AOK20N60L is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested Top View TO-247 700V@150℃ 20A < 0.37Ω D AOK20N60L S D G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25oC PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-Case Symbol RθJA RθCS RθJC G AOK20N60L 600 ±30 20 12 80 6.5 630 1260 5 417 3.3 -55 to 150 300 AOK20N60L 40 0.5 0.3 S Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Rev1.0: Sepetember 2017 www.aosmd.com Page 1 of 5 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Condit.


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