AOL1436

AOL1436 N-Channel Enhancement Mode Field Effect Transistor General Description The AOL1436 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suite for use as a High side switch in CPU core power conversion. -RoHS Compliant -Halogen and Antimony Free Green Device* Features VDS (V) = 25V ID = 50A (VGS = 10V) RDS(ON) < 6mΩ (VGS = 20V) RDS(ON) < 8.2mΩ (VGS = 12V) RDS(ON) < 11.5mΩ (VGS = 10V) UIS Tested Rg,Ciss,Coss,Crss Tested Ultra SO-8TM Top View D S G D Bottom tab connected to drain G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C G Current B TC=100°C Pulsed Drain CurrentC VGS ID IDM Continuous Drain Current A Avalanche CurrentC TA=25°C TA=70°C Repetitive avalanche energy L=0.3mHC IDSM IAR EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-AmbientA Maximum Junction-to-AmbientA t ≤ 10s Steady-State Symbol RθJA Maximum Junction-to-CaseD Steady-State RθJC Maximum 25 ±30 50 48 120 15 12 28 118 43 22 2.3 1.4 -55 to 175 Typ 20 46 2.5 Max 25 55 3.5 Alpha & Omega Semiconductor, Ltd. Units V V A A A mJ W W °C Units °C/W °C/W °C/W www.aosmd.com AOL1436 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Paramete...