AOL1704
N-Channel Enhancement Mode Field Effect Transistor
SRFET TM
General Description
SRFET TM AOL1704 uses advanced ...
AOL1704
N-Channel Enhancement Mode Field Effect Transistor
SRFET TM
General Description
SRFET TM AOL1704 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.
-RoHS Compliant -Halogen and Antimony Free Green Device*
Features
VDS (V) = 30V ID =50A (VGS = 10V) RDS(ON) < 7.8mΩ (VGS = 10V) RDS(ON) < 9.8mΩ (VGS = 4.5V)
UIS Tested! Rg,Ciss,Coss,Crss Tested
Ultra SO-8TM Top View
S G
D
Bottom tab connected to drain
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Continuous Drain
TC=25°CI
Current B
TC=100°C
ID
Pulsed Drain Current
IDM
Continuous Drain TA=25°C
Current H
TA=70°C
Avalanche Current C
Repetitive avalanche energy L=0.3mH C
IDSM IAR EAR
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
D
SRFETTM Soft Recovery
MOSFET: Integrated Schottky Diode
S
Maximum 30 ±12
50
43 120 12 10 25 94 50 25 2.0 1.3 -55 to 175
Units V V
A
A A mJ W
W °C
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A
Maximum Junction-to-Case C
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJC
Typ 24 53 2.4
Max 29 64 3.0
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1...
