AOL1718

AOL1718 30V N-Channel MOSFET SRFET TM General Description SRFETTM AOL1718 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON) and low gate charge. This device is ideally suited for use as a low side switch in CPU core power conversion. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 90A < 3mΩ < 4.3mΩ 100% UIS Tested 100% Rg Tested UltraSO-8TM Top View Bottom View D G S S G D SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 90 71 410 21 16 40 80 100 50 2.1 1.3 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 20 48 1 Max 25 60 1.5 Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 2: April 2011 www.aosmd.com Page 1 of 7 AOL1718 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAME...