AON1611

AON1611 20V P-Channel MOSFET General Description Product Summary The AON1611 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. VDS ID (at VGS=-4.5V) RDS(ON) (at VGS =-4.5V) RDS(ON) (at VGS =-2.5V) RDS(ON) (at VGS =-1.8V) RDS(ON) (at VGS =-1.5V) Typical ESD protection -20V -4A < 58mΩ < 76mΩ < 98mΩ < 120mΩ HBM Class 2 DFN 1.6x1.6A Top View Bottom View S S D G Pin 1 D G Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current G TA=70°C Pulsed Drain Current C ID IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -20 ±8 -4 -3 -16 1.8 1.15 -55 to 150 S Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State Symbol RθJA Typ 56 88 Max 70 110 Units V V A W °C Units °C/W °C/W Rev 0 : June 2012 www.aosmd.com Page 1 of 5 AON1611 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current ID=-250µA, VGS=0V VDS=-20V, VGS=0V VDS=0V, VGS=±8V VDS=VGS, ID=-250µA VGS=-10V, VDS=-5V ...