General Description
SRFETTM AON3702 uses advanced trench technology with a monolithically integrated Schottky diode to p...
General Description
SRFETTM AON3702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.
AON3702
30V N-Channel
MOSFET
SRFET TM
Product Summary
VDS (V) = 30V ID =11A (VGS = 10V) RDS(ON) < 14.5mΩ (VGS = 10V) RDS(ON) < 18mΩ (VGS = 4.5V)
100% Rg Tested
Top View
DFN 3x3 Bottom View
Pin 1
Top View
18 27
3 6G
45
D
SRFETTM Soft Recovery
MOSFET: Integrated Schottky Diode
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
IDSM IDM
Power Dissipation
TA=25°C TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum 30 ±12 11 9 60 3.1 2
-55 to 150
Units V V A
W °C
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJL
Typ 30 65 20
Max 40 80 25
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
AON3702
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown
Voltage
ID=250uA, VGS=0V
IDSS
IGSS VGS(th)
Zero Gate
Voltage Drain Current
Gate-Body leakage current Gate Threshold
Voltage
VDS=24V, VGS=0V
VDS=0V, VG...