AON3702

General Description SRFETTM AON3702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. AON3702 30V N-Channel MOSFET SRFET TM Product Summary VDS (V) = 30V ID =11A (VGS = 10V) RDS(ON) < 14.5mΩ (VGS = 10V) RDS(ON) < 18mΩ (VGS = 4.5V) 100% Rg Tested Top View DFN 3x3 Bottom View Pin 1 Top View 18 27 3 6G 45 D SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B IDSM IDM Power Dissipation TA=25°C TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±12 11 9 60 3.1 2 -55 to 150 Units V V A W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 30 65 20 Max 40 80 25 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AON3702 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250uA, VGS=0V IDSS IGSS VGS(th) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage VDS=24V, VGS=0V VDS=0V, VG...