AON4407

AON4407 12V P-Channel MOSFET General Description The AON4407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. Features VDS (V) = -12V ID = -9 A (VGS = -4.5V) RDS(ON) < 20mΩ (VGS = -4.5V) RDS(ON) < 25mΩ (VGS = -2.5V) RDS(ON) < 31mΩ (VGS = -1.8V) ESD Protected Top View DFN 3x2 Bottom View Pin 1 DD Rg DD D DG GS Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C ID IDM Power Dissipation B TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -12 ±8 -9 -7 -60 2.5 1.6 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady State Steady State Symbol RθJA RθJL Typ 42 74 25 Max 50 90 30 D S Units V V A W °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON4407 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current ID=-250µA, VGS=0V VDS=-12V, VGS=0V VDS=0V, VGS=±8V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V VGS=-4.5V...