AON4420L

www.datasheet4u.com AON4420L N-Channel Enhancement Mode Field Effect Transistor General Description The AON4420L combines advanced trench MOSFET technology with a small footprint package to provide low RDS(ON) per unit area. This device is ideal for load switch and high speed switching applications. Features VDS (V) = 30V ID = 10A RDS(ON) < 19mΩ RDS(ON) < 25mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.5V) - RoHS Compliant - Halogen Free DFN 3x2 Top View Pin 1 Bottom View D D D G D D D S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Pulsed Drain Current Continuous Drain Current A Power Dissipation A C Maximum 30 ±20 50 10 8 1.6 1 -55 to 150 Units V V IDM ID PD TJ, TSTG TA=25°C TA=70°C TA=25°C TA=70°C A W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A B Maximum Junction-to-Lead Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 34 66 20 Max 40 80 25 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON4420L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID = 250µA, VGS = 0V VDS = 30V, VGS = 0V TJ = 55°C VDS = 0V, VGS = ±20V VDS = VGS ID = 250µA VGS = 10V, VDS = 5V VGS = 10V, ID = 10A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS = 4.5V, ID = 8A Forward Transconductance VDS = 5V, ID = 10A IS = 1A,VGS = 0V Diode Forward Voltag...