AON6154

AON6154 45V N-Channel MOSFET General Description Trench Power MV MOSFET technology Low RDS(ON) Low Gate Charge Optimized for fast-switching applications Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 45V 100A < 1.5mΩ < 2.1mΩ Applications Synchronous Rectification in DC/DC and AC/DC Converters Industrial and Motor Drive applications 100% UIS Tested 100% Rg Tested Top View DFN5x6 Bottom View PIN1 PIN1 Top View 18 27 36 45 D G S Orderable Part Number AON6154 Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.3mH C VGS ID IDM IDSM IAS EAS VDS Spike Power Dissipation B 10µs TC=25°C TC=100°C VSPIKE PD Power Dissipation A TA=25°C TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 45 ±20 100 100 400 49 39 45 304 54 125 50 6.2 4.0 -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 15 40 0.8 Max 20 50 1.0 Units °C/W °C/W °C/W Rev.1.0: November 2015 www.aosmd.com Page 1 of 6 AON6154 Electrical Characteristics (TJ=25°C unless otherwise no...