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AON6262E

Alpha & Omega Semiconductors

N-Channel MOSFET

AON6262E 60V N-Channel AlphaSGT TM General Description • Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Ch...


Alpha & Omega Semiconductors

AON6262E

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Description
AON6262E 60V N-Channel AlphaSGT TM General Description Trench Power AlphaSGTTM technology Low RDS(ON) Low Gate Charge ESD protected Applications High efficiency power supply Secondary synchronus rectifier Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Typical ESD protection 100% UIS Tested 100% Rg Tested 60V 40A < 6.2mΩ < 8.5mΩ HBM Class 2 Top View DFN5x6 Bottom View Top View D PIN1 PIN1 1 2 3 4 8 7 G 6 5 S Orderable Part Number AON6262E Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy VDS Spike I Power Dissipation B L=0.3mH 10µs TC=25°C TC=100°C C IDSM IAS EAS VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 40 40 145 23.5 18.5 23 79 72 48 19 6.2 4.0 -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 15 40 2.1 Max 20 50 2.6 Units °C/W °C/W °C/W Rev.1.0: January 2016 www.aosmd.com Page 1 of 6 AON6262E Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Param...




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