AON6266E
60V N-Channel AlphaSGT TM
General Description
• Trench Power AlphaSGTTM technology • Low RDS(ON) • Logic Level...
AON6266E
60V N-Channel AlphaSGT TM
General Description
Trench Power AlphaSGTTM technology Low RDS(ON) Logic Level Gate Drive ESD Protected Excellent Gate Charge x RDS(ON) Product (FOM) RoHS and Halogen-Free Compliant
Applications
High Frequency Switching and Synchronous Rectification
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V)
Typical ESD protection
100% UIS Tested 100% Rg Tested
60V 24A < 13.2mΩ < 17.7mΩ
HBM Class 2
Top View
DFN5x6 Bottom View
Top View
D
PIN1
PIN1
1 2 3 4
8 7 6 5
G S
Orderable Part Number
AON6266E
Package Type
DFN 5x6
Form
Tape & Reel
Minimum Order Quantity
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID IDM
Continuous Drain Current Avalanche Current C
TA=25°C TA=70°C
Avalanche energy VDS Spike I
Power Dissipation B
L=0.3mH 10µs TC=25°C TC=100°C
C
IDSM
IAS EAS VSPIKE
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum 60 ±20 24 21 95 14.5 11.5 14 29 72 26 10.5 5.0 3.2
-55 to 150
Units V V
A
A A mJ V W
W °C
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJC
Typ 20 45 4.0
Max 25 55 4.8
Units °C/W °C/W °C/W
Rev.1.0: February 2017
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