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AON6266E

Alpha & Omega Semiconductors

N-Channel MOSFET

AON6266E 60V N-Channel AlphaSGT TM General Description • Trench Power AlphaSGTTM technology • Low RDS(ON) • Logic Level...


Alpha & Omega Semiconductors

AON6266E

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Description
AON6266E 60V N-Channel AlphaSGT TM General Description Trench Power AlphaSGTTM technology Low RDS(ON) Logic Level Gate Drive ESD Protected Excellent Gate Charge x RDS(ON) Product (FOM) RoHS and Halogen-Free Compliant Applications High Frequency Switching and Synchronous Rectification Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Typical ESD protection 100% UIS Tested 100% Rg Tested 60V 24A < 13.2mΩ < 17.7mΩ HBM Class 2 Top View DFN5x6 Bottom View Top View D PIN1 PIN1 1 2 3 4 8 7 6 5 G S Orderable Part Number AON6266E Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy VDS Spike I Power Dissipation B L=0.3mH 10µs TC=25°C TC=100°C C IDSM IAS EAS VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 24 21 95 14.5 11.5 14 29 72 26 10.5 5.0 3.2 -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 20 45 4.0 Max 25 55 4.8 Units °C/W °C/W °C/W Rev.1.0: February 2017 www.aosmd.com Page 1 of...




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