AON6298
100V N-Channel MOSFET
General Description
Product Summary
The AON6298 uses trench MOSFET technology that is u...
AON6298
100V N-Channel
MOSFET
General Description
Product Summary
The AON6298 uses trench
MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V)
100% UIS Tested 100% Rg Tested
100V 46A < 16.5mΩ < 21mΩ
Top View
DFN5X6 Bottom View
PIN1
Top View
18 27 36 45
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
ID IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS EAS
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum 100 ±20 46 30 95 14.5 11.5 15 11 78 31 7.4 4.7
-55 to 150
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJC
Typ 14 40 1.25
Max 17 55 1.6
D
S
Units V V A
A A mJ W W °C
Units °C/W °C/W °C/W
Rev.1.0: February 2013
www.aosmd.com
Page 1 of 6
AON6298
Electrical Charac...