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AON6414 Datasheet

Part Number AON6414
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description N-Channel MOSFET
Datasheet AON6414 DatasheetAON6414 Datasheet (PDF)

AON6414 30V N-Channel MOSFET General Description Product Summary The AON6414 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested 30V 30A < 10.5mΩ < 17mΩ Top View DFN5X6 Bottom View PIN1 Top View 18 27 36 45 G Absolute Maximum Ratings TA=25°C unless otherwise note.

  AON6414   AON6414






Part Number AON6418
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description N-Channel MOSFET
Datasheet AON6414 DatasheetAON6418 Datasheet (PDF)

AON6418 30V N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 32A < 5mΩ < 8mΩ Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested DFN5X6 Top View Bottom View 1 2 3 4 .

  AON6414   AON6414







Part Number AON6416
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description N-Channel MOSFET
Datasheet AON6414 DatasheetAON6416 Datasheet (PDF)

AON6416 30V N-Channel MOSFET SDMOS TM General Description The AON6416 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 22A < 8mΩ < 14mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View Bottom V.

  AON6414   AON6414







Part Number AON6414A
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description N-Channel MOSFET
Datasheet AON6414 DatasheetAON6414A Datasheet (PDF)

AON6414A 30V N-Channel MOSFET General Description The AON6414A uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 50A < 8mΩ < 10.5mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View Bottom View 1 2 3 4 Top View D 8 7 6 5 G S PIN1 Absolute Maximum Ratings TA=25° C unless otherwise noted.

  AON6414   AON6414







Part Number AON6413
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description 30V P-Channel MOSFET
Datasheet AON6414 DatasheetAON6413 Datasheet (PDF)

AON6413 30V P-Channel MOSFET General Description • Latest Trench Power MOSFET technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • System/Load Switch, Battery Switch Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) Typical ESD protection 100% UIS Tested 100% Rg Tested -30V -32A < 8.5mΩ < 17mΩ HBM Class 2 Top View DFN5X6 Bottom View Top View D PIN1 PPinIN11 1 2 3 4 8 7 6G .

  AON6414   AON6414







N-Channel MOSFET

AON6414 30V N-Channel MOSFET General Description Product Summary The AON6414 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested 30V 30A < 10.5mΩ < 17mΩ Top View DFN5X6 Bottom View PIN1 Top View 18 27 36 45 G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 30 28 120 11 9 30 135 36 14 2 1.3 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 24 53 2.6 Max 30 64 3.5 D S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 4: March 2011 www.aosmd.com Page 1 of 6 AON6414 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V IDSS IGSS VGS(th) Zero Gate Volt.


2015-10-24 : LC320WXN-SAA1    Si2415    AON6414    VS-30CTQ035PbF    VS-30CTQ035-N3    VS-30CTQ040PbF    VS-30CTQ040-N3    VS-30CTQ045PbF    VS-30CTQ045-N3    AO3434   


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