AON6424
30V N-Channel MOSFET
General Description
The AON6424 uses advanced trench technology to provide excellent RDS(O...
AON6424
30V N-Channel
MOSFET
General Description
The AON6424 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications.
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 41A < 8.5mΩ < 10mΩ
100% UIS Tested 100% Rg Tested
DFN5X6 Top View Bottom View
1 2 3 4
Top View
D
8 7 6 5
G S
PIN1
Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source
Voltage VDS Gate-Source
Voltage Continuous Drain Current Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L=0.05mH C TC=25° C Power Dissipation B Power Dissipation A C TC=100° TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case
C
Maximum 30 ±12 41 26 90 11 9 36 32 25 10 2 1.3 -55 to 150
Units V V A
VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG
A A mJ W W ° C
Symbol
t ≤ 10s Steady-State Steady-State
RθJA RθJC
Typ 21 50 3.5
Max 25 60 5
Units ° C/W ° C/W ° C/W
Rev1 : Oct 2010
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Free Datasheet http://www.datasheet4u.com/
AON6424
Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V C TJ=55° VDS=0V, VGS= ±12V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A...