AON6426
30V N-Channel MOSFET
General Description
The AON6426 combines advanced trench MOSFET technology with a low resi...
AON6426
30V N-Channel
MOSFET
General Description
The AON6426 combines advanced trench
MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
Product Summary
VDS (V) = 30V ID = 65A RDS(ON) < 5.5mW RDS(ON) < 7.5mW
(VGS = 10V) (VGS = 10V) (VGS = 4.5V)
100% UIS Tested! 100% Rg Tested!
Top View
DFN5X6 Bottom View
PIN1
Top View
S1 S2 S3 G4
8D
7D
6D
5D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Continuous Drain Current
TC=25°C TC=100°C
ID
Pulsed Drain Current C
IDM
Continuous Drain Current
TA=25°C TA=70°C
IDSM
Avalanche Current C
IAR
Repetitive avalanche energy L=0.1mH C
EAR
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum 30 ±20 65 43 130 14 11 42 88 42 17 2 1.2
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
t ≤ 10s Steady-State
RqJA
24 53
30 64
Maximum Junction-to-Case
Steady-State
RqJC
2.6
3
Rev.2.1: January 2024
www.aosmd.com
D
S
Units V V A
A A mJ W W °C
Units °C/W °C/W °C/W
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AON6426
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown
Voltage
ID=250mA, VGS=0V
30 ...