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AON6774

Alpha & Omega Semiconductors

30V N-Channel MOSFET

AON6774 30V N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Integrated Sch...


Alpha & Omega Semiconductors

AON6774

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Description
AON6774 30V N-Channel AlphaMOS General Description Latest Trench Power AlphaMOS (αMOS LV) technology Integrated Schottky Diode (SRFET) Very Low RDS(ON) at 4.5V VGS Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Application DC/DC Converters in Computing, Servers, and POL Isolated DC/DC Converters in Telecom and Industrial Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 30V 85A < 2.05mΩ < 3.15mΩ Top View DFN5X6 Bottom View PIN1 Top View 18 27 36 45 G D SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode S Orderable Part Number AON6774 Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.05mH C ID IDM IDSM IAS EAS VDS Spike Power Dissipation B 10µs TC=25°C TC=100°C VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 85 66 260 44 35 56 78 36 48 19 6.2 4 -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 15 40 2 Max 20 50 2.6 Units...




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