AON6946
30V Dual Asymmetric N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology ...
AON6946
30V Dual Asymmetric N-Channel AlphaMOS
General Description
Latest Trench Power AlphaMOS (αMOS LV) technology Very Low RDS(on) at 4.5V VGS Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant
Application
DC/DC Converters in Computing, Servers, and POL Isolated DC/DC Converters in Telecom and Industrial
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V)
100% UIS Tested 100% Rg Tested
Q1 30V 16A <11.6mΩ <17mΩ
Q2 30V 18A <7.8mΩ <11.8mΩ
Top View
DFN5X6B Bottom View
PIN1
PIN1
Top View
Bottom View
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max Q1
Max Q2
Drain-Source
Voltage
VDS 30
Gate-Source
Voltage
VGS ±20
±20
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche Energy L=0.05mH C
16 ID 12
IDM 64
14
IDSM
11.5
IAS 19 EAS 9
18 14 72 18G 14 25 16
VDS Spike
100ns
VSPIKE
36
36
TC=25°C Power Dissipation B TC=100°C
PD
7.3 2.9
13 5.2
TA=25°C Power Dissipation A TA=70°C
PDSM
3.5 2.3
3.9 2.5
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Units V V
A
A A mJ V W
W °C
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJC
Typ Q1 29 55 13.8
Typ Q2 26 50 7.7
Max Q1 35 66 17
Max Q2 32 60 9.5
Units °C/W °C/W °C/W
Rev.1.0: Septemb...
