AON6980

AON6980 30V Dual Asymmetric N-Channel AlphaMOS General Description Trench Power AlphaMOS (αMOS LV) technology Low RDS(ON) Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Applications DC/DC Converters in Computing, Servers, and POL Isolated DC/DC Converters in Telecom and Industrial Top View DFN5X6B Bottom View 100% UIS Tested 100% Rg Tested Top View Q1 30V 28A < 6.8mΩ < 10.3mΩ Q2 30V 36A < 3.8mΩ < 4.9mΩ Bottom View PIN1 PIN1 Orderable Part Number AON6980 Package Type DFN 5x6B Q2: SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C VGS ID IDM Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.01mH C IDSM IAS EAS VDS Spike Power Dissipation B 10µs TC=25°C TC=100°C VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Max Q1 30 ±20 28 22 111 18 14 51 13 36 23.5 9.4 3.5 2.2 -55 to 150 Max Q2 30 ±12 36 28 144 27 21 60 18 36 32 13 4.1 2.6 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State S...