AON6984
30V Dual Asymmetric N-Channel MOSFET
General Description
• Trench Power αMOS Technology • Low RDS(ON) • Low Gat...
AON6984
30V Dual Asymmetric N-Channel
MOSFET
General Description
Trench Power αMOS Technology Low RDS(ON) Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V)
Q1 30V 50A < 5.2mΩ < 8.4mΩ
Q2 30V 82A < 2.8mΩ < 3.45mΩ
Applications
DC/DC Converters in Computing Isolated DC/DC Converters in Telecom and Industrial
100% UIS Tested 100% Rg Tested
DFN5X6D
Top View
Bottom View
Top View
Bottom View S2 G2 S2 S2 PHASE
(S1/D2)
PIN1
D1 D1G1
D1 D1
PIN1
PHASE S1/D2
Q2: SRFETTM Soft Recovery
MOSFET: Integrated Schottky Diode
Orderable Part Number
AON6984
Package Type
DFN 5x6D
Form
Tape & Reel
D1
S1/D2
Minimum Order Quantity
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
ID IDM
Continuous Drain Current Avalanche Current C
TA=25°C TA=70°C
Avalanche energy L=0.01mH
C
IDSM
IAS EAS
VDS Spike
10µs
VSPIKE
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Max Q1 30 ±20 50 31 100 19 15 38 7 36 21 8 3.1 2
-55 to 150
Max Q2 30 ±12 82 54 180 26 21 72 26 36 31 13 3.1 2
Units V V
A
A A mJ V W
W °C
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s St...