AONR21307
30V P-Channel MOSFET
General Description
• Latest advanced trench technology • Low RDS(ON) • High Current Cap...
AONR21307
30V P-Channel
MOSFET
General Description
Latest advanced trench technology Low RDS(ON) High Current Capability RoHS and Halogen-Free Compliant
Applications
Notebook AC-in load switch Battery protection charge/discharge
Product Summary
VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V)
100% UIS Tested 100% Rg Tested
-30V -24A < 11mΩ < 18.5mΩ
DFN 3x3_EP
Top View
Bottom View
Pin 1
PIN1
Top View
18 27 36 45
D
G S
Orderable Part Number
AONR21307
Package Type
DFN 3x3 EP
Form
Tape & Reel
Minimum Order Quantity
5000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID IDM
Continuous Drain Current Avalanche Current C
Avalanche energy
TA=25°C TA=70°C
L=0.1mH
C
IDSM
IAS EAS
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum -30 ±25 -24 -24 -82 -17 -14 33 54 28 11 5.0 3.2
-55 to 150
Units V V
A
A A mJ W
W °C
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJC
Typ 20 45 3.7
Max 25 55 4.5
Units °C/W °C/W °C/W
Rev.1.0: September 2017
www.aosmd.com
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AONR21307
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
STATIC PA...