AONR21307

AONR21307 30V P-Channel MOSFET General Description Latest advanced trench technology Low RDS(ON) High Current Capability RoHS and Halogen-Free Compliant Applications Notebook AC-in load switch Battery protection charge/discharge Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) 100% UIS Tested 100% Rg Tested -30V -24A < 11mΩ < 18.5mΩ DFN 3x3_EP Top View Bottom View Pin 1 PIN1 Top View 18 27 36 45 D G S Orderable Part Number AONR21307 Package Type DFN 3x3 EP Form Tape & Reel Minimum Order Quantity 5000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain Current Avalanche Current C Avalanche energy TA=25°C TA=70°C L=0.1mH C IDSM IAS EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±25 -24 -24 -82 -17 -14 33 54 28 11 5.0 3.2 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 20 45 3.7 Max 25 55 4.5 Units °C/W °C/W °C/W Rev.1.0: September 2017 www.aosmd.com Page 1 of 6 AONR21307 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PA...