AONR32314

AONR32314 30V N-Channel MOSFET General Description Latest advanced trench technology Low RDS(ON) High Current capability RoHS and Halogen-Free Compliant Applications Notebook AC-in load switch Battery protection charge/discharge Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 30V 30A < 8.7mΩ < 12.3mΩ DFN 3x3_EP D Top View Bottom View Top View PIN1 Orderable Part Number AONR32314 PIN1 S1 S2 S3 G4 8D 7D 6D G 5D S Package Type DFN 3x3 EP Form Tape & Reel Minimum Order Quantity 5000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.05mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 30 25.5 90 17 13.5 33 27 24 9.6 4.1 2.6 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 24 47 Maximum Junction-to-Case Steady-State RqJC 4.2 Max 30 60 5.2 Units °C/W °C/W °C/W Rev.2.1: September 2022 www.aosmd.com Page 1 of 6 AONR32314 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Co...