AONS1R1A70

AONS1R1A70 700V, a MOS5 TM N-Channel Power Transistor General Description Proprietary aMOS5TM technology Low RDS(ON) Optimized switching parameters for better EMI performance Enhanced body diode for robustness and fast reverse recovery Applications Flyback for SMPS Charger,Adapter,lighting Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested 800V 20A < 1.1Ω 9.4nC 1.2mJ Top View DFN5x6F Bottom View PIN1 PIN1 Top View D S1 S2 S3 G4 8D 7D 6D 5D G S Orderable Part Number AONS1R1A70 Package Type DFN5X6F Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Gate-Source Voltage (dynamic) AC( f>1Hz) Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C L=1mH Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt VGS ID IDM IDSM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Form Tape&Reel Minimum Order Quantity 3000 Maximum 700 ±20 ±30 6.6 4.3 20 1.3 1.1 0.8 0.3 7.5 100 20 104 0.8 4.2 2.7 -55 to 150 Units V V ...