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AONS66402 Datasheet

Part Number AONS66402
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description N-Channel MOSFET
Datasheet AONS66402 DatasheetAONS66402 Datasheet (PDF)

AONS66402 40V N-Channel AlphaSGT TM General Description • Trench Power MOSFET - AlphaSGTTM technology • Low RDS(ON) • Logic Level Gate Drive • Excellent Gate Charge x RDS(ON) Product (FOM) • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 40V 210A < 1.6mΩ < 2.3mΩ Applications • High Frequency Switching and Synchronous Rectification 100% UIS Tested 100% Rg Tested DFN5x6 D Top View Top View Bottom View PIN1 PIN1 S1 S2 S3 G4.

  AONS66402   AONS66402






Part Number AONS66405T
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description 40V N-Channel MOSFET
Datasheet AONS66402 DatasheetAONS66405T Datasheet (PDF)

AONS66405T 40V N-Channel AlphaSGT TM General Description • AlphaSGTTM N-Channel Power MOSFET • Low RDS(ON)*QOSS and optimised switching performance. • RoHS 2.0 and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=8V) 40V 385A < 0.95mΩ < 1.05mΩ Applications • Synchronous Rectification • BMS and Motor 100% UIS Tested 100% Rg Tested Max Tj=175°C DFN5X6 D Top View Bottom View Top View PIN1 S1 S2 S3 G4 PIN1 8D 7D 6D 5 DG S Orderable Part Nu.

  AONS66402   AONS66402







N-Channel MOSFET

AONS66402 40V N-Channel AlphaSGT TM General Description • Trench Power MOSFET - AlphaSGTTM technology • Low RDS(ON) • Logic Level Gate Drive • Excellent Gate Charge x RDS(ON) Product (FOM) • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 40V 210A < 1.6mΩ < 2.3mΩ Applications • High Frequency Switching and Synchronous Rectification 100% UIS Tested 100% Rg Tested DFN5x6 D Top View Top View Bottom View PIN1 PIN1 S1 S2 S3 G4 8D 7D 6D 5D G S Orderable Part Number AONS66402 Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.3mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 40 ±20 210 135 360 49 39 52 406 119 47.5 6.2 4.0 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 15 40 0.87 Max 20 50 1.05 Units °C/W °C/W °C/W Rev.3.0: June 2022 www.aosmd.com Page 1 of 6 AONS66402 Electrical Characteristics (TJ=25°C unles.


2020-05-11 : AO4407C    AOSP21307    AONR21307    AOND32324    AOGF60B65H2AL    AOZ5517QI-02    AOCA32108E    AOD280A60    AOI280A60    AOK125A60   


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