AONV210A60

AONV210A60 600V, a MOS5 TM N-Channel Power Transistor General Description Proprietary aMOS5TM technology Low RDS(ON) Optimized switching parameters for better EMI performance Enhanced body diode for robustness and fast reverse recovery Applications SMPS with PFC,Flyback and LLC topologies Silver ATX,adapter,TV,lighting, Telecom Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested 700V 80A < 0.21Ω 34nC 4.3mJ Top View DFN8X8 Bottom View D D Pin1:G S S Orderable Part Number AONV210A60 Package Type DFN8x8_4L_EP1_S G Pin2: Driver Source G S Driver Source Form Tape & Reel Minimum Order Quantity 3500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Gate-Source Voltage (dynamic) AC( f>1Hz) Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Diode reverse recovery VDS=0 to 400V,IF<=20A,Tj=25°C VGS ID IDM IDSM IAR EAR EAS dv/dt dv/dt di/dt TC=25°C Power Dissipation B Derate above 25°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL Maximum 600 ±20 ±30 20 12 80 4.1 3.3 5 12.5 410 100 20 250 208 1.6 8.3 5.3 -55 to 150 300 Units V V V A A ...