AOP605 Complementary Enhancement Mode Field Effect Transistor
General Description
The AOP605/L uses advanced trench tec...
AOP605 Complementary Enhancement Mode Field Effect Transistor
General Description
The AOP605/L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary
MOSFETs form a high-speed power inverter, suitable for a multitude of applications. AOP605 and AOP605L are electrically identical. -RoHS Compliant -AOP605L is Halogen Free
Features
n-channel VDS (V) = 30V ID = 7.5A (VGS = 10V)
p-channel -30V -6.6A (VGS = -10V)
RDS(ON)
< 28mΩ (VGS = 10V) < 35mΩ (VGS = -10V)
< 43mΩ (VGS = 4.5V) < 58mΩ (VGS = -4.5V)
PDIP8
Top View
Bottom View
S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1
PDIP-8
D2
G2 S2
n-channel
D1
G1 S1
p-channel
Absolute Maximum Ratings T A=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source
Voltage
VDS 30
Gate-Source
Voltage
VGS ±20
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID IDM
7.5 6 30
Power Dissipation
TA=25°C TA=70°C
PD
2.5 1.6
Junction and Storage Temper...
