AOT14N50

AOT14N50/AOB14N50/AOTF14N50 500V, 14A N-Channel MOSFET General Description The AOT14N50 &AOB14N50 & AOTF14N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on) , C iss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Features VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 600V@150℃ 14A < 0.38Ω D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol AOT14N50/AOB14N50 Parameter Drain-Source Voltage VDS 500 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt TC=25°C B Power Dissipation Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D A C AOTF14N50 Units V V VGS TC=25°C TC=100°C ID IDM IAR EAR EAS dv/dt PD TJ, TSTG TL Symbol RθJA RθCS 278 2.2 14 11 ±30 14* 11* 56 6 540 1080 5 50 0.4 -55 to 150 300 AOT14N50/AOB14N50 65 0.5 0.45 AOTF14N50 65 -2.5 A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Maximum Case-to-sink Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. 1/6 www.freescale.net.cn Free Datasheet http://www.datasheet4u.c...