AOT2500L/AOB2500L
150V N-Channel MOSFET
General Description
Product Summary
The AOT2500L/AOB2500L uses Trench MOSFET ...
AOT2500L/AOB2500L
150V N-Channel
MOSFET
General Description
Product Summary
The AOT2500L/AOB2500L uses Trench
MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V)
100% UIS Tested 100% Rg Tested
150V 152A < 6.5mΩ < 7.6mΩ
(< 6.2mΩ∗) (<7.3mΩ∗)
Top View
TO220 Bottom View
D D
Top View D
TO-263 D2PAK
Bottom View
D
G
DS AOT2500L
S DG
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
ID IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.3mH C
IDSM
IAS EAS
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
S G AOB2500L
Maximum 150 ±20 152 107 440 11.5 9.0 65 634 375 187.5 2.1 1.3
-55 to 175
G
G S
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJC
Typ 12 48 0.26
Max 15 60 0.4
* Surface mount package T...