isc N-Channel MOSFET Transistor
AOT2916L
FEATURES ·Drain Current –ID= 23A@ TC=25℃ ·Drain Source Voltage-
: VDSS=100V(M...
isc N-Channel
MOSFET Transistor
AOT2916L
FEATURES ·Drain Current –ID= 23A@ TC=25℃ ·Drain Source
Voltage-
: VDSS=100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) =34mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source
Voltage
100
V
VGS
Gate-Source
Voltage-Continuous
±20
V
ID
Drain Current-Continuous
23
A
IDM
Drain Current-Single Pluse
50
A
PD
Total Dissipation @TC=25℃
41.5
W
TJ
Max. Operating Junction Temperature -55~175 ℃
Tstg
Storage Temperature
-55~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
3.6
℃/W
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc N-Channel
MOSFET Transistor
AOT2916L
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown
Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold
Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate
Voltage Drain Current
VSD
Forward On-
Voltage
VDS= VGS; ID= 0.25mA
VGS= 10V; ID=10A VGS= 10V; ID=10A@TJ=125℃
VGS= ±20V;VDS= 0
VDS=100V; VGS= 0 VDS=100V; VGS= 0@TJ=55℃
IS= 1A; VGS= 0
MIN MAX UNIT
100
V
1.6
2.7
V
34 62
mΩ
±100 nA
1 5
μA
1
V
NOTICE: ISC rese...