AOT5N100

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.2Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 1000 V ±30 V 4 A 16 A 195 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.64 ℃/W AOT5N100 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor AOT5N100 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 250μA 1000 V VGS(th) Gate Threshold Voltage VDS= VGS; ID= 250μA 3.3 4.5 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 2.5A 3.5 4.2 Ω IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 1000V; VGS= 0 VDS= 800V; VGS= 0; Tj= 125℃ VSD Forward On-Voltage IS= 1A; VGS=0 ±100 nA 1 10 μA 1 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet ...