AOT8N80L

AOT8N80L/AOTF8N80 800V, 7.4A N-Channel MOSFET General Description Product Summary The AOT8N80L & AOTF8N80 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested 900V@150℃ 7.4A < 1.63Ω TO-220 D Top View TO-220F D AOT8N80L S D G AOTF8N80 S GD G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25oC PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RθJA RθCS Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. AOT8N80L 800 ±30 7.4 4.6 26 3.8 217 433 5 245 2.0 -55 to 150 AOTF8N80 7.4* 4.6* 50 0.4 300 AOT8N80L 65 0.5 0.51 AOTF8N80 65 -2.5 S Units V V A A mJ mJ V/ns W W/ oC °C...