AOT9N50

AOT9N50/AOTF9N50 500V, 9A N-Channel MOSFET General Description Product Summary The AOT9N50 & AOTF9N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. For Halogen Free add "L" suffix to part number: AOT9N50L & AOTF9N50L VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested TO-220 Top View TO-220F 600V@150℃ 9A < 0.85Ω D G D S G D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT9N50 AOTF9N50 Drain-Source Voltage VDS 500 Gate-Source Voltage VGS ±30 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt 9 9* 6.0 6* 30 3.2 154 307 5 TC=25°C Power Dissipation B Derate above 25oC PD 192 38.5 1.5 0.3 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL -55 to 150 300 Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RθJA RθCS AOT9N50 65 0.5 AOTF9N50 65 -- Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. 0.65 ...