AOTF11N70

AOT11N70/AOTF11N70 700V,11A N-Channel MOSFET General Description Product Summary The AOT11N70 & AOTF11N70 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. For Halogen Free add "L" suffix to part number: AOT11N70L & AOTF11N70L VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested TO-220 Top View TO-220F 800V@150℃ 11A < 0.87Ω D S GD S GD G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT11N70 AOTF11N70 Drain-Source Voltage VDS 700 Gate-Source Voltage VGS ±30 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt 11 11* 7.2 7.2* 43 4 120 240 5 TC=25°C Power Dissipation B Derate above 25oC PD 271 50.0 2.1 0.4 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL -55 to 150 300 Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RθJA RθCS AOT11N70 65 0.5 AOTF11N70 65 -- Maximum Junction-to-Case RθJC * Drain current limited by maximum junction tempera...