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AOTF292L

Alpha & Omega Semiconductors

N-Channel MOSFET

AOT292L/AOB292L/AOTF292L 100V N-Channel AlphaSGT TM General Description • Trench Power AlphaSGTTM technology • Low RDS(...


Alpha & Omega Semiconductors

AOTF292L

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Description
AOT292L/AOB292L/AOTF292L 100V N-Channel AlphaSGT TM General Description Trench Power AlphaSGTTM technology Low RDS(ON) RoHS and Halogen Free Compliant Applications Synchronous Rectification for power supply Ideal for boost converters Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) 100% UIS Tested 100% Rg Tested TO-220 TO-220F Top View TO-263 D 100V 105A < 4.5mΩ < 5.3mΩ (< 4.1mW*) (< 4.9mW*) D G AOT292L DS G AOTF292L G DS S AOB292L G S Orderable Part Number AOT292L AOTF292L AOB292L Package Type TO-220 TO-220F TO-263 Form Tube Tube Tape & Reel Minimum Order Quantity 1000 1000 800 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT(B)292L AOTF292L Drain-Source Voltage VDS 100 Gate-Source Voltage Continuous Drain TC=25°C Current G** TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C VDS Spike I 10μs TC=25°C Power Dissipation B TC=100°C VGS ID IDM IDSM IAS EAS VSPIKE PD ±20 105 70 82 50 420 14.5 11.5 60 180 120 300 47 150 23 TA=25°C Power Dissipation A TA=70°C PDSM 2.1 1.3 Junction and Storage Temperature Range TJ, TSTG -55 to 175 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC AOT(B)292L AOTF292L 15 60 0.5 3.2 Units °C/W °C/W...




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