AOTF360A70L

AOT360A70L/AOTF360A70L/AOB360A70L 700V, a MOS5 TM N-Channel Power Transistor General Description Proprietary aMOS5TM technology Low RDS(ON) Optimized switching parameters for better EMI performance Enhanced body diode for robustness and fast reverse recovery Applications Flyback for SMPS Charger ,PD Adapter, TV, lighting. Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested 800V 48A < 0.36Ω 22.5nC 2.8mJ TO-220 TO-220F TO-263 D D2PAK D S D G S D G S G G AOT360A70L AOTF360A70L AOB360A70L S Orderable Part Number AOB360A70L AOT360A70L AOTF360A70L Package Type TO263 TO220 Green TO220F Green Form Tape&Reel Tube Tube Minimum Order Quantity 800 1000 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT(B)360A70L AOTF360A70L Drain-Source Voltage VDS 700 Gate-Source Voltage VGS ±20 Gate-Source Voltage (dynamic) AC( f>1Hz) Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C L=1mH Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt ±30 12 12* 7.6 7.6* 48 3.4 5.8 50 100 20 TC=25°C Power Dissipation B Derate above 25°C PD 156 1.25 29.5 0.23 Units V V V A A mJ mJ V/ns W W/°C Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL 300 °C T...