AOT8N80L/AOTF8N80
800V, 7.4A N-Channel MOSFET
General Description
Product Summary
The AOT8N80L & AOTF8N80 have been f...
AOT8N80L/AOTF8N80
800V, 7.4A N-Channel
MOSFET
General Description
Product Summary
The AOT8N80L & AOTF8N80 have been fabricated using an advanced high
voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V)
100% UIS Tested 100% Rg Tested
900V@150℃ 7.4A < 1.63Ω
TO-220 D
Top View
TO-220F
D
AOT8N80L
S D G
AOTF8N80
S GD
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy G
Peak diode recovery dv/dt
ID
IDM IAR EAR EAS dv/dt
TC=25°C Power Dissipation B Derate above 25oC
PD
Junction and Storage Temperature Range
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics
TJ, TSTG TL
Parameter Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol RθJA RθCS
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
AOT8N80L 800 ±30
7.4 4.6
26 3.8 217 433
5 245 2.0
-55 to 150
AOTF8N80 7.4* 4.6*
50 0.4
300
AOT8N80L 65
0.5 0.51
AOTF8N80 65
-2.5
S
Units V V
A
A mJ mJ V/ns W W/ oC °C...