AOTL66912

AOTL66912 100V N-Channel AlphaSGT TM General Description Trench Power MOSFET - AlphaSGTTM technology Combination of low RDS(ON) and wide safe operating area (SOA) Higher in-rush current enabled for faster start-up and shorter down time RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) Applications Telecom hotswap Load switch Solar Battery management 100% UIS Tested 100% Rg Tested Top View TOLLA Bottom View 100V 380A < 1.7mΩ < 2.5mΩ D D PIN1 Orderable Part Number AOTL66912 S G PIN1 Package Type TOLLA G S Form Minimum Order Quantity Tape & Reel 2000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C (≤100μS) Continuous Drain Current Avalanche Current C Avalanche energy TA=25°C TA=70°C L=0.1mH C TC=25°C Power Dissipation B TC=100°C ID IDM IDSM IAS EAS PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 380 269 1520 49 39 90 405 500 250 8.3 5.3 -55 to 175 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 10 35 0.2 Max 15 45 0.3 Units °C/W °C/W °C/W Rev.1.0: June 2019 www.aosmd.com Page 1 of 6 AOTL66912 Electrical Charact...