AOUS66416

AOUS66416 40V N-Channel AlphaSGT TM General Description Trench Power MOSFET - AlphaSGTTM technology Low RDS(ON) Excellent QG x RDS(ON) Product (FOM) RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Applications High frequency switching and synchronous rectification Synchronous rectification MOSFET for Server Power, ATX Power, Adaptor, Telecom power 100% UIS Tested 100% Rg Tested UltraSO-8TM Top View Bottom View D D 40V 69A < 3.3mΩ < 5.0mΩ G S S G G S Orderable Part Number AOUS66416 Package Type Ultra SO8 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.3mH Power Dissipation B TC=25°C TC=100°C C VGS ID IDM IDSM IAS EAS PD Power Dissipation A TA=25°C TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 40 ±20 69 69 240 33 26.5 30 135 73.5 29.5 6.2 4.0 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 15 40 1.35 Max 20 50 1.7 Units °C/W °C/W °C/W Rev.1.0: April 2019 www.aosmd.com Page 1 of 6 AOUS66416 Electrical Character...