AP09N70I-A-HF-3

Advanced Power Electronics Corp. AP09N70I-A-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement 100% Avalanche Tested Fast Switching Performance RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID 650V 0.75 Ω 9A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP09N70I-A-HF-3 is in the TO-220CFM isolated through-hole package which is widely used in commercial and industrial applications where a small PCB footprint or an attached isolated heatsink is required. This device is well suited for use in high voltage applications such as off-line AC/DC converters. G D S TO-220CFM (I) Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 65 0 + 30 9 5 40 42 0.34 Units V V A A A W W/°C mJ A mJ °C °C Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range Energy2 305 9 9 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 3 65 Unit °C/W °C/W Ordering Information AP09N70I-A-HF-3TB RoHS-compliant, halogen-free TO-220CFM, shipped in tubes...