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AP10N70W Datasheet

Part Number AP10N70W
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP10N70W DatasheetAP10N70W Datasheet (PDF)

AP10N70W RoHS-compliant Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 600V 0.6Ω 10A S Description AP10N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. The TO-3P type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combinatio.

  AP10N70W   AP10N70W






Part Number AP10N70W-HF-3
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP10N70W DatasheetAP10N70W-HF-3 Datasheet (PDF)

Advanced Power Electronics Corp. AP10N70W-HF-3 N-channel Enhancement-mode Power MOSFET 100% Avalanche-Tested Simple Drive Requirement Fast Switching Performance RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID 600V 0.6Ω 10A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP10N70W-HF-3 is in the TO-3P through-hole package which is widely used in higher power commercial and indust.

  AP10N70W   AP10N70W







Part Number AP10N70S
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP10N70W DatasheetAP10N70S Datasheet (PDF)

AP10N70S RoHS-compliant Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 600V 0.6Ω 10A S Description AP10N70S is specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. TO-263 type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast .

  AP10N70W   AP10N70W







Part Number AP10N70R-A
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP10N70W DatasheetAP10N70R-A Datasheet (PDF)

AP10N70R/P-A RoHS-compliant Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 650V 0.62Ω 10A S Description AP10N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. Both TO-220 and TO-262 type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with t.

  AP10N70W   AP10N70W







Part Number AP10N70R-A
Manufacturers A-POWER
Logo A-POWER
Description N-CHANNEL MOSFET
Datasheet AP10N70W DatasheetAP10N70R-A Datasheet (PDF)

AP10N70R/P-A Pb Free Plating Product Advanced Power Electronics Corp. ▼ 100% Avalanche Rated Test ▼ Fast Switching Performance ▼ Simple Drive Requirement ▼ RoHS Compliant G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 650V 0.6Ω 10A S Description AP10N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications.Both TO-220 and TO-262 type provide high blocking voltage to overcome voltage surge and sag in the toughest .

  AP10N70W   AP10N70W







N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP10N70W RoHS-compliant Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 600V 0.6Ω 10A S Description AP10N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. The TO-3P type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching, ruggedized design and cost-effectiveness. The TO-3P package is widely preferred for commercial-industrial applications. The device is suited for switch mode power supplies ,DC-AC converters and high current high speed switching circuits. G D S TO-3P Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 600 ± 30 10 6.3 40 174 1.39 2 Units V V A A A W W/ ℃ mJ A ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 50 10 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 0.72 40 Unit ℃/W ℃/W 201022072-1/4 Data & specifications subject to change without noti.


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