3.2x1.6mm PHOTOTRANSISTOR
Part Number: AP3216P3C
Features
z 3.2mmx1.6mm SMT LED, 1.1mm thickness. z Mechanically and spectrally matched to infrared emitting LED lamp. z Package : 2000pcs / reel. z Moisture sensitivity level : level 3. z RoHS compliant.
Description
Made with NPN silicon phototransistor chips.
Package Dimensions
Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.2(0.0079") unless otherwise noted. 3. The specifications, characteristics and technical data d.
PHOTOTRANSISTOR
3.2x1.6mm PHOTOTRANSISTOR
Part Number: AP3216P3C
Features
z 3.2mmx1.6mm SMT LED, 1.1mm thickness. z Mechanically and spectrally matched to infrared emitting LED lamp. z Package : 2000pcs / reel. z Moisture sensitivity level : level 3. z RoHS compliant.
Description
Made with NPN silicon phototransistor chips.
Package Dimensions
Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.2(0.0079") unless otherwise noted. 3. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. 4.The device has a single mounting surface. The device must be mounted according to the specifications.
SPEC NO: DSAB4397 APPROVED: WYNEC
REV NO: V.8 CHECKED: Allen Liu
DATE: FEB/07/2012 DRAWN: D.M.Su
PAGE: 1 OF 4 ERP: 1203000370
Electrical / Optical Characteristics at TA=25°C
Symbol
Parameter
Min.
VBR CEO
Collector-to-Emitter Breakdown Voltage
30
VBR ECO
Emitter-to-Collector Breakdown Voltage
5
VCE (SAT)
Collector-to-Emitter Saturation Voltage
I CEO TR TF
Collector Dark Current Rise Time (10% to 90% ) Fall Time (90% to 10% )
I (ON)
On State Collector Current
0.2
Typ.
15 15 0.4
Max.
0.8 100
Units V V V nA us us mA
Test Conditions
IC=100uA Ee=0mW/c ㎡
IE=100uA Ee=0mW/c ㎡
IC=2mA Ee=20mW/c ㎡
VCE=10V Ee=0mW/c ㎡
VCE = 5V IC=1mA RL=1000Ω
VCE = 5V Ee=1mW/c ㎡
λ=940nm
Absolute Maximum Ratings at TA=25°C
Parameter Collector-to-Emitter Voltage Emitter-to-Collector Voltage Power Dissipation at (or below).