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AP3216P3C Datasheet

Part Number AP3216P3C
Manufacturers Kingbright Corporation
Logo Kingbright Corporation
Description PHOTOTRANSISTOR
Datasheet AP3216P3C DatasheetAP3216P3C Datasheet (PDF)

3.2x1.6mm PHOTOTRANSISTOR Part Number: AP3216P3C Features z 3.2mmx1.6mm SMT LED, 1.1mm thickness. z Mechanically and spectrally matched to infrared emitting LED lamp. z Package : 2000pcs / reel. z Moisture sensitivity level : level 3. z RoHS compliant. Description Made with NPN silicon phototransistor chips. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.2(0.0079") unless otherwise noted. 3. The specifications, characteristics and technical data d.

  AP3216P3C   AP3216P3C






PHOTOTRANSISTOR

3.2x1.6mm PHOTOTRANSISTOR Part Number: AP3216P3C Features z 3.2mmx1.6mm SMT LED, 1.1mm thickness. z Mechanically and spectrally matched to infrared emitting LED lamp. z Package : 2000pcs / reel. z Moisture sensitivity level : level 3. z RoHS compliant. Description Made with NPN silicon phototransistor chips. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.2(0.0079") unless otherwise noted. 3. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. 4.The device has a single mounting surface. The device must be mounted according to the specifications. SPEC NO: DSAB4397 APPROVED: WYNEC REV NO: V.8 CHECKED: Allen Liu DATE: FEB/07/2012 DRAWN: D.M.Su PAGE: 1 OF 4 ERP: 1203000370 Electrical / Optical Characteristics at TA=25°C Symbol Parameter Min. VBR CEO Collector-to-Emitter Breakdown Voltage 30 VBR ECO Emitter-to-Collector Breakdown Voltage 5 VCE (SAT) Collector-to-Emitter Saturation Voltage I CEO TR TF Collector Dark Current Rise Time (10% to 90% ) Fall Time (90% to 10% ) I (ON) On State Collector Current 0.2 Typ. 15 15 0.4 Max. 0.8 100 Units V V V nA us us mA Test Conditions IC=100uA Ee=0mW/c ㎡ IE=100uA Ee=0mW/c ㎡ IC=2mA Ee=20mW/c ㎡ VCE=10V Ee=0mW/c ㎡ VCE = 5V IC=1mA RL=1000Ω VCE = 5V Ee=1mW/c ㎡ λ=940nm Absolute Maximum Ratings at TA=25°C Parameter Collector-to-Emitter Voltage Emitter-to-Collector Voltage Power Dissipation at (or below).


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